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STD17N05L
STD17N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STD17N05L 50 V < 0.085 17 A
STD17N06L 60 V < 0.085 17 A

s TYPICAL RDS(on) = 0.065
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED 3
s REPETITIVE AVALANCHE DATA AT 100oC 2 3
LOW GATE CHARGE 1
s)
s
1
LOGIC LEVEL COMPATIBLE INPUT

t(
s

s 175oC OPERATING TEMPERATURE

uc
s APPLICATION ORIENTED IPAK DPAK
CHARACTERIZATION TO-251
d TO-252

ro
s THROUGH-HOLE IPAK (TO-251) POWER (Suffix "-1") (Suffix "T4")
PACKAGE IN TUBE (SUFFIX "-1")


eP
s SURFACE-MOUNTING DPAK (TO-252)


let
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
so
Ob
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
REGULATORS
-
(s)
s

s DC-DC & DC-AC CONVERTERS


ct
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,

du
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

o
Pr
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

e
let
STD17N05L STD17N06L
V DS Drain-source Voltage (V GS = 0) 50 60 V
o
bs
V DGR Drain- gate Voltage (R GS = 20 k) 50 60 V
V GS Gate-source Voltage