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MMBT2222A
TRANSISTOR(NPN)
SOT-23
FEATURES
Epitaxial planar die construction 1. BASE
Complementary PNP Type available(MMBT2907A) 2.EMITTER
3.COLLECTOR
MARKING: 1P
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Dissipation 250 mW
RJA Thermal Resistance, Junction to Ambient 500 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55to+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V
*
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.01 A
Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 A
Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 A
*
hFE(1) VCE=10V, IC= 150mA 100 300
DC current gain hFE(2) VCE=10V, IC= 0.1mA 40
*
hFE(3) VCE=10V, IC= 500mA 42
* IC=500 mA, IB= 50mA 1
Collector-emitter saturation voltage VCE(sat) V
IC=150 mA, IB=15mA 0.3
* IC=500 mA, IB= 50mA 2.0
Base-emitter saturation voltage VBE(sat) V
IC=150 mA, IB=15mA 1.2
VCE=20V, IC= 20mA,
Transition frequency fT 300 MHz
f=100MHz
Delay time td VCC=30V, VBE(off)=-0.5V 10 nS
Rise time tr IC=150mA , IB1= 15mA 25 nS
Storage time tS VCC=30V, IC=150mA 225 nS
Fall time tf IB1=-IB2=15mA 60 nS
*pulse test: Pulse Width 300s, Duty Cycle 2.0%.
1
JinYu www.htsemi.com
semiconductor
Date:201/5
MMBT2222A
2
JinYu www.htsemi.com
semiconductor
Date:201/5