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SEMICONDUCTOR BD136
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION. A
B D
FEATURES C
E
High Current. (Max. : -1.5A)
F
Low Voltage (Max. : -45V)
DC Current Gain : hFE=40Min. @IC=-0.15A G
Complementary to BD135.
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX
M
H 1.0 MAX
Collector-Base Voltage VCBO -45 V J 1.9 MAX
O K _
0.75 + 0.15
N P
_
15.5 + 0.5
Collector-Emitter Voltage VCEO -45 V 1 2 3 L
M _
2.3 + 0.1
N _
0.65 + 0.15
Emitter-Base Voltage VEBO -5 V
1. EMITTER O 1.6
P 3.4 MAX
Collector Current IC -1.5 A 2. COLLECTOR
3. BASE
Base Current IB -0.5 A
Collector Power Ta=25 1.25 TO-126
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -45 - - V
hFE (1) IC=-5mA, VCE=-2V 25 - -
DC Current Gain hFE (2) IC=-150mA, VCE=-2V 40 - 250
hFE (3) IC=-500mA, VCE=-2V 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-5V, IC=-50mA - 160 - MHz
2003. 6. 16 Revision No : 0 1/1