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STF19NM50N
STP19NM50N, STW19NM50N
N-channel 500 V, 0.2 , 14 A MDmeshTM II Power MOSFET
in TO-220FP, TO-220 and TO-247
Features
VDSS @ RDS(on)
Type ID
TJmax max
3
STF19NM50N 2
3
2
1
STP19NM50N 550 V < 0.25 14 A 1
TO-247
STW19NM50N TO-220
100% avalanche tested
Low input capacitances and gate charge 3
2
1
Low gate input resistance
TO-220FP
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This second generation of MDmeshTM technology,
applies the benefits of the multiple drain process
to STMicroelectronics' well-known PowerMESHTM
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
high dv/dt capability and excellent avalanche
characteristics.
Table 1. Device summary
Order codes Marking Package Packaging
STF19NM50N TO-220FP
STP19NM50N 19NM50N TO-220 Tube
STW19NM50N TO-247
February 2010 Doc ID 17079 Rev 1 1/15
www.st.com 15
Contents STF19NM50N, STP19NM50N, STW19NM50N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 17079 Rev 1
STF19NM50N, STP19NM50N, STW19NM50N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220 TO-247 TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate-source voltage