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MMBT5550
MMBT5551
High Voltage NPN Transistors COLLECTOR
3
3
1
BASE 1
2
2
EMITTER
SOT-23
MMBT5550 MMBT5551
V CEO 140 160
160 180
6.0
600
556
300
2.4
417
MMBT5550 = M1F ; MMBT5551 = G1
(TA=25 C unless otherwise noted)
(3)
1.0 , MMBT5550 140
MMBT5551 160
-100 , MMBT5550 160
MMBT5551 180
10 , 6.0
WEITRON
http://www.weitron.com.tw
MMBT5550
MMBT5551
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Cutoff Current I CBO
( VCB 100 Vdc, I E= 0 ) MMBT5550 100 nAdc
( VCB 120 Vdc, I E= 0 ) MMBT5551 50
( VCB 100 Vdc, I E= 0 ,TA= 100 C ) MMBT5550 100 uAdc
MMBT5551 50
( VCB 100 Vdc, IE= 0 , TA= 100 C )
Emitter Cutoff Current
( VEB 4.0 Vdc, I C=0 ) I EBO 50 nAdc
ON CHARACTERISTICS
DC Current Gain hFE -
(IC=1.0 mAdc, VCE=5.0 Vdc) MMBT5550 60 -
MMBT5551 80 -
(IC=10 mAdc, VCE=5.0 Vdc) MMBT5550 60 250
MMBT5551 80 250
(IC=50 mAdc, VCE=5.0 Vdc) MMBT5550 20 -
MMBT5551 30 -
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC=10 mAdc, IB=1.0mAdc) Both Types - 0.15
(IC=50 mAdc, IB=5.0mAdc) MMBT5550 - 0.25
MMBT5551 - 0.20
Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC=10 mAdc, IB=1.0mAdc) Both Types - 1.0
(IC=50 mAdc, IB=5.0mAdc) MMBT5550 - 1.2
MMBT5551 - 1.0
1. FR-5=1.0 x 0.75 x 0.062 in
2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%
WEITRON
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MMBT5550
MMBT5551
500
300 VCE = 1.0 V
TJ = 125 C
h FE , DC CURRENT GAIN
200 VCE = 5.0 V
25 C
100
-55 C
50
30
20
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
FIG.1 DC Current Gain
1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.9
0.8
0.7
IC = 1.0 m A 10 m A 30 m A 100 m A
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I B , BASE CURRENT (mA)
FIG. 2 Collector Saturation Region
1
10 1.0
TJ = 25 C
I C , COLLECTOR CURRENT (mA)
VCE = 30 V
100
V VOLTAGE (VOLTS)
0.8
10-1 TJ = 125 C VBE(sat ) @ I C / I B = 10
I C = I CES 0.6
-2
10 75 C
0.4
-3 REVERSE FORWARD
10
,
-4 25 C 0.2
10
VCE(sat )@ IC / I B = 10
-5
10 0
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE , BASE-EMITTER VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA)
FIG. 3 Collector Cut-Off Region FIG. 4 "On" Voltages
WEITRON
http://www.weitron.com.tw
MMBT5550
MMBT5551
2.5
V , TEMPERA TURE COEFFICIENT (mV/ C)
2.0 TJ = - 55 C to +135 C
1.5
1.0 VBB VCC
10.2 V
0.5 q VC for VCE(sat) -8.8V 30 V
Vin
0 100 3.0 k RC
- 0.5 10 ms 0.25mF RB
INPUT PULSE Vout
- 1.0 5.1 k
q VB for VBE(sat)
- 1.5 tr ,t f 10 n s Vin 100 1N914
- 2.0 DUTY CYCLE = 1.0%
- 2.5
0.1 0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
Values Shown are for IC@ 10 mA
IC , COLLECTOR CURRENT (mA)
FIG.5 Temperature Coefficients FIG. 6 Switching Time Test Circuit
100 1000
70 TJ= 25 C I C / I B = 10
50 500 TJ = 25 C
C, CAPACIT ANCE (p F)
30 300 tr @ VCC= 120 V
t , TIM E (n s)
20 200
t r@ VCC = 30 V
10 100
7.0 Cibo
5.0 50 t d@ VEB(off) = 1.0 V
3.0 Cobo 30 VCC = 120 V
2.0 20
1.0 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200
VR, REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA)
FIG. 7 Capacitances FIG. 8 Turn-On Time
5000
t f @ VCC= 120 V IC / I B = 10
3000
TJ = 25 C
2000
t f @ VCC = 30 V
1000
t , TIME (n s)
500
300 t s@ VCC = 120 V
200
100
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
I C , COLLECTOR CURRENT (mA)
FIG.9 Turn-Off Time
WEITRON
http://www.weitron.com.tw
MMBT5550
MMBT5551
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.80
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.60
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON
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