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PZT559
PNP Silicon Planar
Elektronische Bauelemente
High Current Transistor
RoHS Compliant Product
SOT-223
Description
The PZT559 is designed for general
purpose switching and amplifier
applications.

Features
* Excellent Gain Characteristic Specified
Up To 3 Amps.
Millimeter Millimeter
REF. REF.

De
ad
tC
eo
* 4 Amps Continuous Current, Up To Min. Max. Min. Max.
10 Amps Peak Current A 6.70 7.30 B C
13 T YP.
C 2.90 3.10 J 2.30 REF.

BE
C
* Very Low Saturation Voltages 5 5 9 D 0.02 0.10 1 6.30 6.70
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
H 0.25 0.35 4 3.30 3.70
o
5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -180 V
VCEO Collector-Emitter Voltage -140 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current (DC) -4 A
I CM Collector Current (Pulse) -10 A
PD Total Power Dissipation 3 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O

*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Symbol
BVCBO
BVCER
Min
-180
-180
Typ.
-
-
Max
-
-
Unit
V
V
Test Conditions
I C=-100