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BU406D
BU407D
SILICON NPN SWITCHING TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s NPN TRANSISTOR
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR
MONOCHROME TV 3
2
1
TO-220
DESCRIPTION
The BU406D and BU407D are silicon planar
epitaxial NPN transistors with integrated damper
diode, in Jedec TO-220 plastic package. They
are fast switching, devices for use in horizontal
deflection output stages of MTV receivers with INTERNAL SCHEMATIC DIAGRAM
110o CRT.
The BU406D is primarily intended for large
screen, while the BU407D is for medium and
small screens
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BU406D BU407D
V CBO Collector-Base Voltage (I E = 0) 400 330 V
V CEV Collector-Emitter Voltage (V BE = - 1.5V) 400 330 V
V EBO Emitter-Base Voltage (I C = 0) 6 V
IC Collector Current 7 A
I CM Collector Peak Current (repetitive) 10 A
I CM Collector Peak Current (t p = 10ms) 15 A
IB Base Current 4 A
P tot Total Dissipation at T c = 25 o C 60 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
BU406D/BU407D
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.08 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEV Collector Cut-off for BU406D
Current (V BE = - 1.5V) V CE =400 V 15 mA
for BU407D
V CE =330 V 15 mA
I EBO Emitter Cut-off Current V EB = 6 V 400 mA
(I C = 0)
V CE(sat) Collector-emitter IC = 5 A IB = 0.65 A 1 V
Saturation Voltage
V BE(sat) Base-emitter IC = 5 A I B = 0.65 A 1.3 V
Saturation Voltage
fT Transition-Frequency I C = 0.5 A V CE = 10V 10 MHz
t off Turn-off Time IC = 5 A I Bend = 0.65 A 0.75