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PSMN035-150B;
PSMN035-150P
N-channel enhancement mode field-effect transistor
Rev. 04 -- 22 February 2001 Product specification




1. Description
SiliconMAXTM1 products use the latest TrenchMOSTM2 technology to achieve the
lowest possible on-state resistance for each package.

Product availability:
PSMN035-150P in SOT78 (TO-220AB)
PSMN035-150B in SOT404 (D2-PAK).


2. Features
s Fast switching
s Very low on-state resistance.


3. Applications
s Switched mode power supplies.


4. Pinning information c
c




Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb
2 drain (d) [1]
d
3 source (s)
mb mounting base;
connected to g
drain (d) 2
1 3 MBK116 MBB076 s
MBK106
1 2 3

SOT78 (TO-220AB) SOT404 (D2-PAK)

[1] It is not possible to make connection to pin 2 of the SOT404 package.


1. SiliconMAX is a trademark of Royal Philips Electronics.
2. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175