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2SK3019
Transistor
2.5V Drive Nch MOS FET
2SK3019
Structure Dimensions (Unit : mm)
Silicon N-channel EMT3
MOSFET
1.6 0.7
0.3 0.55
(3)
0.8
1.6
Applications
(2) (1)
Interfacing, switching (30V, 100mA)
0.1Min.
0.2 0.2
0.15
0.5 0.5
1.0
(1)Source
Features (2)Gate
1) Low on-resistance. (3)Drain Abbreviated symbol : KN
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Packaging specifications Equivalent circuit
Package Taping Drain
Code TL
Type
Basic ordering unit
(pieces) 3000
2SK3019
Gate
Absolute maximum ratings (Ta=25