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SS8550W
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
SOT-323
FEATURES Collector
3 Dim Min Max
3
A 1.800 2.200
Power dissipation 1 1 B 1.150 1.350
PCM : 0.2 W 2 Base C 0.800 1.000
Collector Current D 0.300 0.400
ICM : -1.5 A A 2 G 1.200 1.400
Emitter
L
Collector-base voltage H 0.000 0.100
V(BR)CBO : - 40 V 3 J 0.100 0.250
Top View B S K 0.350 0.500
Operating & storage junction temperature 1 2
O O L 0.590 0.720
Tj, Tstg : - 55 C ~ + 150 C
V G S 2.000 2.400
V 0.280 0.420
Marking : Y2 C All Dimension in mm
D H J
K
O
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-0.1mA IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 A IC=0 -5 V
Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V , IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 A
HFE(1) VCE=-1V, IC=-100m A 120 350
DC current gain
HFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80m A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800 mA, IB= -80m A -1.2 V
VCE=-10V, IC=-50mA
Transition frequency fT 100 MHz
f=30MHz
output capacitance (VCB=-10V,IE=0,f=1MHz) 20
CLASSIFICATION OF h FE(1)
Rank L H
Range 120-200 200-350
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
SS8550W
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
Typical Characteristics
-0.5 1000
VCE = -1V
IB=-4.0mA
IC[mA], COLLECTOR CURRENT
-0.4 IB=-3.5mA
hFE, DC CURRENT GAIN
IB=-3.0mA 100
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
10
IB=-1.0mA
-0.1
IB=-0.5mA
1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10000 -100
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC=10IB VCE = -1V
IC[mA], COLLECTOR CURRENT
-1000 -10
VBE(sat)
-100 -1
VCE(sat)
-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE
10 100
1 10
-1 -10 -100 -1000 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2