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2STC4793

NPN power bipolar transistor
Preliminary data


Features
High breakdown voltage VCEO = 230 V
Complementary to 2STA1837
High transition frequency, typical fT = 100 MHz

Applications
Audio power amplifier
3
Drive stage amplifier 2
1

TO-220FP
Description
This device is a NPN transistor manufactured
using new "PB-HDC" (power bipolar high density
current) technology. The resulting transistor Figure 1. Internal schematic diagram
shows good gain linearity behavior.




Table 1. Device summary
Order code Marking Package Packaging

2STC4793 2STC4793 TO-220FP Tube



March 2010 Doc ID 15401 Rev 2 1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7
change without notice.
Electrical ratings 2STC4793


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) 230 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 1 A
ICM Collector peak current 2 A
PTOT Total dissipation at TC = 25