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A733(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
Power dissipation
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -100 mA
PC Collector Power Dissipation 250 mW
Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Junction and Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V
Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA
Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA
DC current gain hFE VCE= -6V, IC= -1mA 90 200 600
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V
Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V
Transition frequency fT VCE=-6V,IC=-10mA 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 6 pF
VCE=-6V,IC=-0.3mA,
Noise figure NF 20 dB
Rg=10k,f=100HZ
CLASSIFICATION OF hFE
Rank R Q P K
Range 90-180 135-270 200-400 300-600
A733(PNP)
TO-92 Bipolar Transistors
Typical Characteristics