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STBV42

High voltage fast-switching NPN power transistor

Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed

Applications
Compact fluorescent lamps (CFLs)
SMPS for battery charger
TO-92 TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied
using halogen-free molding compound.




Table 1. Device summary
Order codes Marking Package Packaging

STBV42 BV42 TO-92 Bulk
STBV42-AP BV42 TO-92AP Ammopack
STBV42G BV42G TO-92 Bulk
STBV42G-AP BV42G TO-92AP Ammopack




July 2009 Doc ID 7232 Rev 6 1/10
www.st.com 10
Electrical ratings STBV42


1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 1 A
ICM Collector peak current (tP < 5 ms) 2 A
IB Base current 0.5 A
IBM Base peak current (tP < 5 ms) 1 A
PTOT Total dissipation at Tc = 25