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SID10N30-600I
7.5A, 300V, RDS(ON) 600 m
Elektronische Bauelemente N-Channel Enhancement MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free

DESCRIPTION TO-251P
The miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low RDS(on) and
to ensure minimal power loss and heat dissipation.

FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe
A
DPAK saves board space B C
D
Fast switching speed.
High performance trench technology.
GE

APPLICATION K
DC-DC converters, power management in portable and F
H

battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.

M J P

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.40 6.80 G 6.00 6.30
B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.40 0.60 K 0.60 0.90
E 6.80 7.20 M 0.70 1.20
F 4.00 P 0.40 0.60

ABSOLUTE MAXIMUM RATINGS (TA=25