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2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 -- 19 March 2007 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
1.2 Features
I General-purpose transistor
I Small SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -45 V
IC collector current - - -100 mA
hFE DC current gain VCE = -10 V; 210 - 340
IC = -2 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
sym013
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
2PB709ART - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
2PB709ART C5*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -45 V
VCEO collector-emitter voltage open base - -45 V
VEBO emitter-base voltage open collector - -6 V
IC collector current - -100 mA
ICM peak collector current single pulse; - -200 mA
tp 1 ms
IBM peak base current single pulse; - -100 mA
tp 1 ms
Ptot total power dissipation Tamb 25