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STGD3NB60SD
N-CHANNEL 3A - 600V - DPAK
PowerMESHTM IGBT
TYPE VCES VCE(sat) IC
STGD3NB60SD 600 V < 1.5 V 3A
s HIGH INPUT IMPEDANCE (VOLTAGE
DRIVEN)
3
s VERY LOW ON-VOLTAGE DROP (Vcesat) 1
s HIGH CURRENT CAPABILITY
s INTEGRATED WHEELING DIODE DPAK
s OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
performances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).
APPLICATIONS
s MOTOR CONTROL
s GAS DISCHARGE LAMP
s STATIC RELAYS
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGD3NB60SDT4 GD3NB60SD DPAK TAPE & REEL
May 2004 1/9
STGD3NB60SD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VGE Gate-Emitter Voltage