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STW13NK80Z
N-channel 800V - 0.53 - 12A - TO-247
Zener-protected SuperMESHTM Power MOSFET

General features
Type VDSS RDS(on) ID pW
STW13NK80Z 800V <0.65 12A 230W

Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized



Very low intrinsic capacitances
Very good manufacturing repeatibility
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TO-247

Description d
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established P ro
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special te
Internal schematic diagram
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care is taken to ensure a very good dv/dt


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capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
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MDmeshTM products.

Applications
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Switching application

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Order codes
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STW13NK80Z
Marking
W13NK80Z
Package
TO-247
Packaging
Tube




October 2006 Rev 4 1/14
www.st.com 14
Contents STW13NK80Z


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11



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5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STW13NK80Z Electrical ratings


1 Electrical ratings

Table 1. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 800 V
VGS Gate- source voltage