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Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SA1664 TRANSISTOR (PNP) SOT-89
FEATURES 1. BASE
Power dissipation
2. COLLECTOR 1
PCM : 0.5 W (Tamb=25) 2
Collector current 3. EMITTER 3
ICM : -0.8 A
Collector-base voltage
V(BR)CBO : -35 V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V
Collector cut-off current ICBO VCB=-35V, IE=0 -0.1