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SEMICONDUCTOR KTC945B
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C

FEATURES
Excellent hFE Linearity.




A
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTA733B(O, Y, GR class). G B 4.80 MAX
D C 3.70 MAX




J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO 60 V N 1.00




C
1 2 3




L




M
Collector-Emitter Voltage VCEO 50 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO 5 V 3. COLLECTOR

Collector Current IC 150 mA
Collector Power Dissipation PC 625 mW
TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=10mA - 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification O:70~140, Y:120~240, GR:200~400, BL:350~700




2001. 9. 14 Revision No : 2 1/2
KTC945B




2001. 9. 14 Revision No : 2 2/2