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STS6PF30L
P-CHANNEL 30V - 0.027 - 6A SO-8
STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STS6PF30L 30 V <0.030 6A
s TYPICAL RDS(on) = 0.027
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
s)
This Power MOSFET is the latest development of
t(
STMicroelectronis unique "Single Feature SizeTM" SO-8
uc
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
d
ro
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM P
te
APPLICATIONS
s MOBILE PHONE APPLICATIONS
le
so
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
Ob
EQUIPMENT
-
ct (s)
o du
e Pr
o let
bs
Information furnished is believed to be accurate and reliable. However, STMicroel
ABSOLUTE MAXIMUM RATINGS of use of such information nor for any infringement of patents or other rights of third
O Symbol
VDS
Parameter
Drain-source Voltage (VGS = 0)
by implication or otherwise under any patent or patent rights of STMicroelectronic
Value Unit
to change without notice. This publication supersedes and replaces all information
30 components in life support devices or systems withou
authorized for use as critical V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage