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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification 1999 Aug 24
Supersedes data of 1995 Sep 12
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
DESCRIPTION PINNING
NPN planar epitaxial transistor PIN DESCRIPTION page 4
mounted in a plastic SOT223
1 emitter
envelope, intended for wideband
amplifier applications. It features high 2 base
output voltage capabilities. 3 emitter
4 collector
1 2 3
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 18 V
IC DC collector current - - 150 mA
Ptot total power dissipation up to Ts = 135