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SEMICONDUCTOR KRC110M~KRC114M
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
A
With Built-in Bias Resistors.
Simplify Circuit Design. O DIM MILLIMETERS
F
A 3.20 MAX
Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX
C 0.55 MAX
G
D _
2.40 + 0.15
E 1.27
F 2.30
C _
G 14.00+ 0.50
H 0.60 MAX
EQUIVALENT CIRCUIT J 1.05
E E
K 1.45
L 25
C
J
M 0.80
D
K
1 2 3 N N 0.55 MAX
R1 O 0.75
L
B
1. EMITTER
2. COLLECTOR
3. BASE
E
TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2008. 11. 20 Revision No : 4 1/4
KRC110M~KRC114M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC110M - 0.025 -
KRC111M - 0.03 -
Rise
KRC112M tr - 0.3 -
Time
KRC113M - 0.06 -
KRC114M - 0.11 -
KRC110M - 3.0 -
KRC111M VO=5V - 2.0 -
Switching Storage
KRC112M tstg VIN=5V - 6.0 - S
Time Time
KRC113M RL=1k - 4.0 -
KRC114M - 5.0 -
KRC110M - 0.2 -
KRC111M - 0.12 -
Fall
KRC112M tf - 2.0 -
Time
KRC113M - 0.9 -
KRC114M - 1.4 -
KRC110M 3.29 4.7 6.11
KRC111M 7 10 13
Input Resistor KRC112M R1 - 70 100 130 k
KRC113M 15.4 22 28.6
KRC114M 32.9 47 61.1
Note : * Characteristic of Transistor Only.
2008. 11. 20 Revision No : 4 2/4
KRC110M~KRC114M
h FE - I C V CE(sat) - I C
KRC110M KRC110M
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC111M KRC111M
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC112M KRC112M
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
DC CURRENT GAIN h FE
1k 1
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 11. 20 Revision No : 4 3/4
KRC110M~KRC114M
h FE - I C VCE(sat) - I C
KRC113M KRC113M
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
KRC114M KRC114M
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 11. 20 Revision No : 4 4/4