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STL100N1VH5
N-channel 12 V, 0.0022 25 A PowerFLATTM (5x6)
,
STripFETTM V Power MOSFET
Features
RDS(on)
Order code VDSS ID
max.
STL100N1VH5 12 V <0.003 25 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
PowerFLATTM ( 5x6 )
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications Figure 1. Pin-out configuration
Description
This device is a 12 V N-channel STripFETTMV
Power MOSFET which has been designed to
achieve very low on-state resistance providing
also one of the best-in-class figure of merit
(FOM).
Table 1. Device summary
Order code Marking Package Packaging
STL100N1VH5 100N1VH5 PowerFLATTM (5x6) Tape and reel
March 2011 Doc ID 018550 Rev 1 1/13
www.st.com 13
Contents STL100N1VH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 018550 Rev 1
STL100N1VH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 12 V
VGS Gate-source voltage