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SEMICONDUCTOR KMB4D8DN55Q
TECHNICAL DATA Dual N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
H
portable equipment and battery powered systems. T
D P G L
FEATURES
A
VDSS=55V, ID=4.8A.
Low Drain-Source ON Resistance. DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=50m (Max.) @ VGS=10V B1 _
3.90 + 0.3
8 5 B2 _
6.00 + 0.4
: RDS(ON)=75m (Max.) @ VGS=4.5V
D _
0.42 + 0.1
Super High Dense Cell Design. B1 B2 G _
0.15 + 0.1
High Power and Current Handling Capability H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
P 1.27 Typ.
T _
0.20 + 0.05
FLP-8 (1)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 55 V
Gate-Source Voltage VGSS 20 V
DC ID * 4.8
Drain Current A
Pulsed (Note1)
IDP * 25
Source-Drain Diode Current IS* 1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW) D1 D1 D2 D2
S1 1 8 D1
G1 2 7 D1
G1 G2
S2 3 6 D2
G2 4 5 D2
S1 S2
2007. 3. 22 Revision No : 2 1/5
KMB4D8DN55Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 55 - - V
Drain Cut-off Current IDSS VDS=44V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A (Note 1) 1.0 1.8 2.5 V
VGS=10V, ID=4.5A (Note 1) - 38 50
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=3A (Note 1) - 60 75
ON State Drain Current ID(ON) VGS=10V, VDS=5V (Note 1) 20 - - A
Forward Transconductance gfs ID=4.5A, VDS=5V (Note 1) - 7 - S
Source-Drain Diode Forward Voltage VSD IS=1.7A, VGS=0V (Note 1) - 0.8 1.2 V
Dynamic (Note 2)
VDS=48V, ID=4.5A,
- 17.3 20
VGS=10V (Fig.1)
Total Gate Charge Qg
VDS=48V, ID=4.5A,
- 8.1 9.5 nC
VGS=4.5V (Fig.1)
Gate-Source Charge Qgs VDS=48V, ID=4.5A, - 1.8 2.2
Gate-Drain Charge Qgd VGS=10V (Fig.1) - 4.2 4.9
Turn-on Delay time td(on) - 3.2 3.8
Turn-on Rise time tr VDD=30V, ID=4.5A, - 10.1 12
ns
Turn-off Delay time td(off) VGS=10V, RG=6 (Fig.2) - 13.3 15.3
Turn-off Fall time tf - 8.3 9.6
Input Capacitance Ciss - 700 805
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 82 95 pF
Reverse transfer Capacitance Crss - 50 58
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 2 2/5
KMB4D8DN55Q
ID - VDS ID - VGS
20 25
VGS= 5V
VGS=6V VGS=4.5V
16 20
Drain Current ID (A)
Drain Current ID (A)
VGS=10V
12 VGS=4V 15
8 10
Tj = 25 C
Tj = -55 C
4 5 Tj = 125 C
VGS=3V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 2.0 3.0 4.0 5.0 6.0
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
IS - VSD
Vth - Tj
20
Normalized Threshold Voltage Vth
1.6
Reverse Drain Current IS (A)
VDS = VGS
IDS = 250