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BS170 / MMBF170 -- N-Channel Enhancement Mode Field Effect Transistor
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect High density cell design for low RDS(ON).
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been Voltage controlled small signal switch.
designed to minimize on-state resistance while provide
Rugged and reliable.
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC. High saturation current capability.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
BS170 MMBF170
D
S
D TO-92 SOT-23
G G
S
Absolute Maximum Ratings TA = 25