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SEMICONDUCTOR KTC9016
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
B C
FEATURES
Small Reverse Transfer Capacitance
A
: Cre=0.65pF(Typ.).
Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
_
CHARACTERISTIC SYMBOL RATING UNIT H J 14.00 + 0.50
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO 40 V M 0.45 MAX
N 1.00
Collector-Emitter Voltage VCEO 30 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO 4 V 1. EMITTER
2. BASE
Collector Current IC 20 mA 3. COLLECTOR
Emitter Current IE -20 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=1mA 40 - 198
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 - - 1.0 pF
Transition Frequency fT VCE=6V, IC=1mA, f=200MHz 260 - - MHz
Collector-Base Time Constant CC rbb' VCE=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF - 2.2 4.0 dB
VCE=6V, IE=-1mA, f=100MHz
Power Gain Gpe 15 - - dB
Note) hFE Classification E:40 59, F:54 80, G:72 108, H:97 146, I:130 198
1994. 5. 11 Revision No : 0 1/1