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WTX1012
N-Channel ENHANCEMENT MODE
POWER MOSFET 3

P b Lead(Pb)-Free
1
2
FEATURES:
* Power Mosfet : 1.8V Rated SC-89
* Gate-Source ESD Protected: 2000 V
* High-Side Switching Drain
* Low On-Resistance: 0.7
* Low Threshold: 0.8 V (typ) 3
* Fast Switching Speed: 10 ns

BENEFITS:
* Ease in Driving Switches

* Low-Voltage Operation
1 (Top View) 2
* High-Speed Circuits
* Low Battery Voltage Operation Gate Source

APPLICATIONS:
* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS 6

TA = 25 C 600 500
Continuous Drain Current (TJ = 150 C)b ID
TA = 85 C 400 350
mA
Pulsed Drain Currenta IDM 1000

Continuous Source Current (diode conduction)b IS 275 250

TA = 25 C 175 150
Maximum Power Dissipationb for SC 75
SC-75
TA = 85 C 90 80
PD mW
TA = 25 C 275 250
Maximum Power Dissipationb for SC 89
SC-89
TA = 85 C 160 140

Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.

Device Marking
WTX1012 = A

WEITRON 1/6 31-Mar-09
http://www.weitron.com.tw
WTX1012
Electrical Characteristics (TA=25