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MMBTA92



TRANSISTOR(PNP)
SOT-23

FEATURES
1. BASE
2. EMITTER
High voltage transistor 3. COLLECTOR



MARKING:2D

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -300 V
VCEO Collector-Emitter Voltage -300 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -300 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
RJA Thermal Resistance, junction to Ambient 410 /mW


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -300 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V

Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V

Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
hFE(1) VCE= -10V, IC= -1mA 60

DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200

hFE(3) VCE= -10V, IC=-30mA 60

Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V

Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V
VCE=-20V, IC= -10mA
Transition frequency fT 50 MHz
f=30MHz




1




JinYu www.htsemi.com
semiconductor

Date:201/5
MMBTA92




2




JinYu www.htsemi.com
semiconductor

Date:201/5