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STP52N25M5
N-channel 250 V, 0.055 28 A, TO-220
,
MDmesh TM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STP52N25M5 250 V < 0.065 28 A
Amongst the best RDS(on)* area
3
High dv/dt capability 2
1
Excellent switching performance TO-220
Easy to drive
100% avalanche tested
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This devices is an N-channel MDmeshTM V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics' well-known
PowerMESHTM horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code Marking Package Packaging
STP52N25M5 52N25M5 TO-220 Tube
July 2010 Doc ID 17776 Rev 1 1/12
www.st.com 12
Contents STP52N25M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 17776 Rev 1
STP52N25M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage 25 V
ID Drain current (continuous) at TC = 25