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KTC3203(NPN)
TO-92 Transistors
1. EMITTER
TO-92
2. COLLECTOR
3. BASE
Features
Complementary to KTA1271
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 800 mA
PC 625 mW
Collector Power Dissipation
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 35V , IE=0 0.1 A
Collector cut-off current ICEO VCE= 25V , IB=0 0.2 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE=1V, IC= 100mA 100 320
DC current gain
hFE(2) VCE=1V, IC= 700mA 35
Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 20mA 0.5 V
Base-emitter voltage VBE VCE= 1V, IC= 10mA 0.8 V
Transition frequency fT VCE= 5 V, IC= 10mA 120 MHz
Collector Output Capacitance Cob VCB=10V,IE= 0,f=1MHz 13 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 100-200 160-320
KTC3203(NPN)
TO-92 Transistors
Typical Characteristics