cem8958.pdf part of CET cem8958 cem8958.pdf, . Electronic Components Datasheets Active components Transistors CET cem8958.pdf text manual preview

Text preview for : cem8958.pdf part of CET cem8958 . Electronic Components Datasheets Active components Transistors CET cem8958.pdf

Back to : cem8958.pdf | Home

CEM8958
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES
5
30V, 7A, RDS(ON) = 28m @VGS = 10V.
RDS(ON) = 40m @VGS = 4.5V.
-30V, -5.2A, RDS(ON) = 52m @VGS = -10V.
RDS(ON) = 80m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
High power and current handing capability. 8 7 6 5

Lead free product is acquired.
Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS