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SEMICONDUCTOR KTA1281
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
B D
FEATURES
Low Collector Saturation Voltage
A
: VCE(sat)=-0.5V(Max.) (IC=-1A) P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
High Speed Switching Time : tstg=1.0 S(Typ.) C
B 5.20 MAX
C 0.60 MAX
S
Complementary to KTC3209.
G
Q D 2.50 MAX
K E 1.15 MAX
F 1.27
J
R
G 1.70 MAX
F F H 0.55 MAX
J _
14.00 + 0.50
K 0.35 MIN
MAXIMUM RATING (Ta=25 ) H H H
L _
0.75 + 0.10
M E M M 4
CHARACTERISTIC SYMBOL RATING UNIT N 25
O 1.25
D
Collector-Base Voltage VCBO -50 V 1 2 3 H
L
O
P 1.50
N N Q 0.10 MAX
Collector-Emitter Voltage VCEO -50 V R _
12.50 + 0.50
1. EMITTER
S 1.00
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR
3. BASE
Collector Current IC -2 A
Collector Power Dissipation PC 1 W
TO-92L
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -50 - - V
hFE (1)(Note) VCE=-2V, IC=-0.5A 70 - 240
DC Current Gain
hFE (2) VCE=-2V, IC=-1.5A 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-1A, IB=-0.05A - - -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-1A, IB=-0.05A - - -1.2 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 40 - pF
Turn-on Time ton OUTPUT - 0.1 -
20