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MJ4032
MJ4035
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s GENERAL PURPOSE SWITCHING
1
s GENERAL PURPOSE AMPLIFIERS 2
DESCRIPTION
The MJ4035 is silicon epitaxial-base NPN power TO-3
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 K R2 Typ. = 55
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
PNP MJ4032
NPN MJ4035
V CBO Collector-Base Voltage (I E = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 16 A
IB Base Current 0.5 A
P tot Total Dissipation at T c 25 o C 150 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
For PNP types voltage and current values are negative.
June 1997 1/4
MJ4032 / MJ4035
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.17 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = 100 V 1 mA
o
Current (R BE = 1K) V CE = 100 V T c = 150 C 5 mA
I CEO Collector Cut-off V CE = 50 V 3 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 5 mA
(I C = 0)
V (BR)CEO Collector-Emitter I C = 100 mA 100 V
Breakdown Voltage
V CE(sat) Collector-Emitter I C = 10 A I B = 40 mA 2.5 V
Saturation Voltage I C = 16 A I B = 80 mA 4 V
V BE Base-Emitter Voltage I C = 10 A V CE = 3 V 3 V
h FE DC Current Gain I C = 10 A V CE = 3 V 1000
Pulsed: Pulse duration = 300