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2N7002K
N-Channel Enhancement 3 DRAIN

Mode Power MOSFET 3
P b Lead(Pb)-Free 1
GATE * 1
2
* Gate
Pretection
Diode
SOURCE 2
SOT-23
Features:
* Low on-resistance.
* Fast switching speed.
* Low-voltage drive.
* Easily designed drive circuits.
* Easy to parallel.
* Pb-Free package is available.
* Esd Protected:2000V

Maximum Ratings(TA= 25 Unless Otherwise Specified)
Parameter Symbol Limits Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGSS