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Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK444 -800A -800B
The device is intended for use in VDS Drain-source voltage 800 800 V
Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2 A
(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W
DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 6.0 8.0
in general purpose switching resistance
applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
case
1 gate
2 drain
g
3 source
case isolated
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 800 V
VDGR Drain-gate voltage RGS = 20 k - 800 V