Text preview for : gt60m303.pdf part of Toshiba gt60m303 . Electronic Components Datasheets Active components Transistors Toshiba gt60m303.pdf
Back to : gt60m303.pdf | Home
GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.25s (TYP.)
FRD : trr = 0.7s (TYP.)
Low saturation voltage : VCE (sat) = 2.1V (TYP.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25