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BF620
TRANSISTOR (NPN)
SOT-89
FEATURES
Low current (max. 50mA) 1. BASE
High voltage (max. 300V).
Video output stages. 2. COLLECTOR 1
2
3. EMITTER
3
MarkingDC
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 10 nA
Emitter cut-off current IEBO VEB=5V, IC=0 50 nA
DC current gain hFE VCE=20V, IC=25mA 50
Collector-emitter saturation voltage VCE(sat) IC=30mA, IB=5mA 0.6 V
Transition frequency fT VCE=10V, IC=10mA, f=100MHz 60 MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
BF620
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05