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2SB1274(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
Features
1
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-5mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A
hFE(1) VCE=-5V, IC=-500mA 70 280
DC current gain
hFE(2) VCE=-5V, IC=-3A 20
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-200mA -1 V
Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V
Transition frequency fT VCE=-5V, IC=-500mA 100 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 60 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 70-140 100-200 140-280
2SB1274(PNP)
TO-220 Transistor
Typical Characteristics