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Guilin Strong Micro-Electronics Co.,Ltd.
BSS84
SOT-23 (SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P MOS
MAXIMUM RATINGS
Characteristic Symbol Max Unit
Drain-Source Voltage
BVDSS -50 V
-
Gate- Source Voltage
VGS +20 V
-
Drain Current (continuous)
IDR -130 mA
-
Drain Current (pulsed)
IDRM -520 mA
-
THERMAL CHARACTERISTICS
Symbol Max Unit
Characteristic
Total Device Dissipation PD 200 mW
TA=25 25
Derate above25 25 1.8 mW/
Thermal Resistance Junction to Ambient RJA 350 /W
Junction and Storage Temperature
TJ,Tstg 150,-55to+150
Guilin Strong Micro-Electronics Co.,Ltd.
BSS84
DEVICE MARKING
BSS84=SP
BSS84=
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
BVDSS -50 -- -- V
-(ID =-250uA ,VGS=0V)
Gate Threshold Voltage
VGS(th) -1.0 -- -2.5 V
(ID =-250uA ,VGS= VDS)
Diode Forward Voltage Drop
VSD -- -- -1.5 V
(ISD=-200mA ,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= -50V) IDSS -- -- -15 uA
(VGS=0V, VDS=-50V, TA=125) -60
Gate Body Leakage
IGSS -- -- +10 nA
(VGS=+20V, VDS=0V)
Static Drain-Source On-State Resistance
RDS(ON) -- -- 10
(ID=-100mA ,VGS=-5V)
Input Capacitance
CISS -- 73 -- pF
(VGS=0V, VDS=-25V,f=1MHz)
Common Source Output Capacitance
COSS -- 10 -- pF
(VGS=0V, VDS=-25V,f=1MHz)
Turn-ON Time
t(on) -- -- 5 ns
(VDS=-30V, ID=-270mA, RGEN=6)
Turn-OFF Time
t(off) -- -- 20 ns
(VDS=-30V, ID=-270mA, RGEN=6)
Reverse Recovery Time
trr -- 10 -- ns
(ISD=-100mA, VGS=0V)
1. FR-5=1.0