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BC857S
Multi-Chip TRANSISTOR (PNP)
SOT-363
FEATURES
Power dissipation
C1
B2
PCM : 300 mW(Tamb=25) E2
Collector current E1
ICM : -200 mA B1
C2
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ,Tstg: -55to +150
MARKING: 3C
ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10