Text preview for : bc818.pdf part of HT Semiconductor bc818 . Electronic Components Datasheets Active components Transistors HT Semiconductor bc818.pdf
Back to : bc818.pdf | Home
BC881
TRANSISTOR (NPN)
BC818-16 SOT-23
BC818-25
BC818-40
1. BASE
2. EMITTER
FEATURES 3. COLLECTOR
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage VCBO IC= 10A, IE=0 30 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 25 V
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 5 V
Collector cut-off current ICBO VCB= 25 V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A
hFE(1) VCE= 1V, IC= 100mA 100 630
DC current gain
hFE(2) VCE= 1V, IC= 300mA 60
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC= 500mA 1.2 V
Collecter capactiance Cob VCB=10V ,f=1MHz 6 pF
VCE= 5 V, IC= 50mA 170
Transition frequency fT MHz
f=100MHz
CLASSIFICATION OF hFE (1)
Rank BC818-16 BC818-25 BC818-40
Range 100-250 160-400 250-630
Marking 6E 6F 6G
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
BC881
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:201/5