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2SA1145
TO-92MOD Transistor (PNP)
1. EMITTER TO-92MOD
5.800
1 2. COLLECTOR 6.200
2
3 3. BASE
8.400
8.800
0.900
1.100
Features 0.400
0.600
Complementary to 2SC2705 13.800
14.200
Small collector output capacitance: Cob=2.5pF(Typ.)
High transition frequency: fT=200MHz(Typ.)
1.500 TYP
2.900
3.100
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600
0.380
Symbol Parameter Value Units 0.400 4.700
0.500 5.100
VCBO Collector-Base Voltage -150 V
1.730
VCEO Collector-Emitter Voltage -150 V 4.000 2.030
VEBO Emitter-Base Voltage -5 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -50 mA
PC Collector Power Dissipation 800 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100 A, IE=0 -150 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5 V
Collector cut-off current ICBO VCB=-150 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5 V, IC=0 -0.1 A
DC current gain hFE VCE=-5 V, IC=-10mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA -1 V
Base-emitter voltage VBE VCE=-5 V, IC=-10mA -0.8 V
Transition frequency fT VCE=-5 V, IC=-10mA 200 MHz
Collector output capacitance Cob VCB=-10 V, IE=0, f=1 MHz 2.5 pF
CLASSIFICATION OF hFE
Rank O Y
Range 80-160 120-240
Marking
2SA1145
TO-92MOD Transistor (PNP)
Typical Characteristics