Text preview for : tip100-107.pdf part of ST tip100-107 . Electronic Components Datasheets Active components Transistors ST tip100-107.pdf
Back to : tip100-107.pdf | Home
TIP100/TIP102
TIP105/TIP106/TIP107
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
3
DESCRIPTION 2
1
The TIP100 and TIP102 are silicon epitaxial-base
NPN power transistors in monolithic Darlington
configuration mounted in TO-220 plastic TO-220
package, intented for use in power linear and
switching applications.
The complementary PNP types are TIP105 and
TIP107 respectively.
Also TIP106 is a PNP type.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN TIP100 TIP102
PNP TIP105 TIP106 TIP107
V CBO Collector-Base Voltage (IE = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current 15 A
IB Base Current 1 A
o
P t ot Total Dissipation at T case 25 C 80 W
o
T amb 25 C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
* For PNP types voltage and current values are negative.
June 1997 1/4
TIP100/TIP102/TIP105/TIP106/TIP107
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1.56 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CEO Collector Cut-off for T IP100/TIP105 V CE = 30 V 50