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PZT4401
NPN Transistor
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT4401 is designed for general
purpose switching and amplifier applications.

Features
*High Power Dissipation: 1500mW at 25 o C
*High DC Current Gain: 100~300 at 150mA
Millimeter Millimeter
*Complementary to PZT4403 REF.
Min. Max.
REF.
Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.
D 0.02 0.10 1 6.30 6.70
4 4 0 1 E 0C 10 C 2 6.30 6.70
Date Code
I 0.60 0.80 3 3.30 3.70
H 0.25 0.35 4 3.30 3.70
B C E 5 1.40 1.80
o
ABSOLUTE MAXIMUM RATINGS Ta=25 C
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (Continous) 600 mA
PD Total Power Dissipation 1.5 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O

o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 60 - - V I C= 100