Text preview for : stb14nf10.pdf part of ST stb14nf10 . Electronic Components Datasheets Active components Transistors ST stb14nf10.pdf
Back to : stb14nf10.pdf | Home
STB14NF10
STP14NF10 STP14NF10FP
N-CHANNEL 100V - 0.115 - 15A TO-220/TO-220FP/D2PAK
LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STB14NF10 100 V <0.13 15 A
STP14NF10 100 V <0.13 15 A
STP14NF10FP 100 V <0.13 10 A
s TYPICAL RDS(on) = 0.115 3
3 1
s EXCEPTIONAL dv/dt CAPABILITY 1
2
s 100% AVALANCHE TESTED D2PAK
TO-220FP TO-263
s APPLICATION ORIENTED
CHARACTERIZATION (Suffix "T4")
s SURFACE-MOUNTING D2PAK (TO-263)
3
POWER PACKAGE IN TUBE (NO SUFFIX) OR 1
2
IN TAPE & REEL (SUFFIX "T4")
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelectronics
INTERNAL SCHEMATIC DIAGRAM
unique STripFETTM process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STB14NF10
STP14NF10FP
STP14NF10
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage