Text preview for : czt31c.pdf part of LGE czt31c . Electronic Components Datasheets Active components Transistors LGE czt31c.pdf



Back to : czt31c.pdf | Home

CZT31C
SOT-223 Transistor(NPN)
1. BASE SOT-223
2. COLLECTOR
1
3. EMITTER



Features
Complementary to CZT32C
Power amplifier applications up to 3.0 amps.




Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=1m A,IE=0 100 V

Collector-emitter breakdown voltage V(BR)CEO IC=30mA,IB=0 100 V

Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V

Collector cut-off current ICBO VCB=100V,IE=0 200 uA

Base cut-off current ICEO VCE=60V,IB=0 300 uA

Emitter cut-off current IEBO VEB=5V,IC=0 1 mA

hFE(1)* VCE=4V,IC=1A 25
DC current gain
hFE(2) * VCE=4V,IC=3A 10 100

Collector-emitter saturation voltage VCE(sat) * IC=3.0A,IB=375mA 1.2 V

Base-emitter voltage VBE * VCE=4V,IC=3A 1.8 V

Transition frequency fT VCE=10V,IC=500mA,f=1MHz 3 MHz

* Pulsed , 2%D.C.
CZT31C
SOT-223 Transistor(NPN)


Typical Characteristics