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CZD1182
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
TO-252
6. 50 0. 15
2. 30 0. 10
FEATURES 5. 30 0. 10
C 0. 51 0. 05
The CZD1182 is designed for medium power amplifier application
5
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
0. 10
0. 51 0. 10 1. 20
0. 20
0. 10
RoHS Compliant Product
5. 50
0 0. 10
9. 70
0. 75
5 5
0. 80 0. 10
0. 6
MARKING : 1182
0. 15
0. 20
0. 60 0. 10
2. 30 0. 10 0 9
(With Date Code) 2. 30 0. 10
1. 60
2. 70
0. 51
B C E
*
MAXIMUM RATINGS* TA=25 C unless otherwise noted
O
Parameter Symbol Value Units
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -32 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -2 A
Collector Current -Pulse,Pw=100mS IC -3 A
Collector Dissipation PC 10 W
Junction and Storage Temperature TJ, Tstg +150,-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50