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CEA3252
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY



FEATURES

30V, 5A, RDS(ON) = 32m @VGS = 10V.
RDS(ON) = 45m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead free product is acquired.

SOT-89 package.



G
D
S
D
G
SOT-89
S




ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS