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Advanced Power MOSFET IRFW/I550A
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.04
Lower Input Capacitance ID = 40 A
Improved Gate Charge
Extended Safe Operating Area
D2-PAK I2-PAK
175 C Operating Temperature
Lower Leakage Current : 10