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Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY

30V, 6.8A, RDS(ON) = 28m @VGS = 10V.
RDS(ON) = 42m @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 58m @VGS = -10V.
RDS(ON) = 85m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2
8 7 6 5
High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8 1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS